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基本資料   
徐曉萱 助理教授
Hsiao-Hsuan HSU
聯絡資料 實驗室連結: 聯絡電話:(02)27712171 #2712
現職 臺北科大/材料及資源工程系
授課資訊 連結
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主要學歷   
就學期間 國別 主修學門系所 畢/肄業學校 學位
2009-09-01 ~ 2014-07-01 中華民國 電子工程學系 國立交通大學 博士
2006-09-01 ~ 2008-08-01 中華民國 電子工程學系 國立交通大學 碩士
2002-09-01 ~ 2006-06-01 中華民國 材料科學與工程學系 國立交通大學 學士
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精通專長   
  • 電子材料與元件技術
  • 熱電材料與模組製程
  • 半導體製程
  • 薄膜製程與分析
  • 材料熱動力學模擬
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相關經歷   
服務期間 服務機關 服務部門 職稱
2014-08-01 ~ 2016-03-01 台灣積體電路製造股份有限公司 前瞻產品可靠度處 主任工程師
2009-11-01 ~ 2014-08-01 工業技術研究院 綠能與環境研究所 研究員
2008-09-01 ~ 2009-06-01 台灣積體電路製造股份有限公司 先進製程產品工程部 高級工程師
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期刊論文   
  • "Implementation of Dopant-Free Hafnium-Oxide Negative Capacitance Field-Effect Transistor", IEEE Transactions on Electron Devices, 825-828, SCI, 2019/01/01
  • "Investigation of Gate-Stress Engineering in Negative Capacitance FETs Using Ferroelectric Hafnium Aluminum Oxides", IEEE Transactions on Electron Devices, 1082 - 1086, SCI, 2019/01/01
  • "Forming-Free SiGeOx/TiOy Resistive Random Access Memories Featuring Large Current Distribution Windows", Journal of Nanoscience and Nanotechnology, 1-4, SCI, 2019/01/01
  • "Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors", Physica Status Solidi- Rapid Research Letters, 1800573, SCI, 2018/12/01
  • "Effect of Particle Size of as-milled powders on Microstructural and Magnetic Properties of Y3MnxAl0.8-xFe4.2O12 Ferrites", Journal of the American Ceramic Society, 1-10, SCI, 2018/11/01
  • "Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering", Physica Status Solidi- Rapid Research Letters, 1800493, SCI, 2018/09/01
  • "Improved Thermal Stability and Stress Immunity in Highly Scalable Junctionless FETs Using Enhanced-Depletion Channels", ECS Journal of Solid State Science and Technology, Q242-Q245, SCI, 2018/08/01
  • "On the Electrical Characteristics of Ferroelectric FinFET Using Hafnium Zirconium Oxide with Optimized Gate Stack", ECS Journal of Solid State Science and Technology, P640-P646, SCI, 2018/07/01
  • "Investigation of Double Snapback Characteristic in Resistor-Triggered SCRs Stacking Structure", IEEE TRANSACTIONS ON ELECTRON DEVICES, 4200-4205, SCI, 2017/10/01
  • "Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors", IEEE TRANSACTIONS ON NANOTECHNOLOGY, 876-879, SCI, 2017/09/01
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研討會論文   
  • "Impact of Negative Capacitance on P-Type Tin-Oxide Thin Film Transistor", 2019 International Thin Film Transistor Conference, 沖繩, 2019/02/28
  • "Characteristic Simulation of Ferroelectric Hafnium-Aluminum-Oxide Devices Integrated with Aluminum Buffer Layer", 2018 International Electron Devices & Materials Symposium, 基隆, 2018/11/14
  • "Investigation on Polarization Characteristics of Ferroelectric Memories with Thermally Stable Hafnium Aluminum Oxides", 2018 International Electron Devices & Materials Symposium, 基隆, 2018/11/14
  • "Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory", Electron Devices Technology and Manufacturing (EDTM), 神戶, 2018/03/13
  • "Interface Engineering of Ferroelectric Negative Capacitance FET for Hysteresis-Free Switch and Reliability Improvement", IEEE International Reliability Physics Symposium (IRPS), 加州, 2018/03/11
  • "Ferroelectric Hafnium-Oxide Memories with Metal-Gate Strained Engineering", TACT 2017 International Thin Films Conference, 花蓮, 2017/10/15
  • "Strain-Enhanced Ferroelectric Aluminum-Doped Hafnium Oxides for Volatile and Nonvolatile Memories Applications", Solid State Devices and Materials (SSDM), 仙台, 2017/09/19
  • "Carrier Transport Mechanism and Electrical Properties of P-Type Tin-Oxide Thin-Film Transistors with Channel Thickness Scaling", International Symposium on Metastable, Amorphous and Nanostructured Materials, Donostia-San Sebastian, 2017/06/18
  • "Electrical characterization of p-type metal-oxide thin film transistors using tin-rich tin-oxide semiconductor materials", IEEE The 6th International Symposium on Next-Generation Electronics (ISNE), 基隆, 2017/05/23
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