瀏覽人次: 1617097
基本資料   
黃恆盛 教授
HENG-SHENG HUANG
聯絡資料 實驗室連結: 電子信箱: hshuang@ntut.edu.tw
聯絡電話:無
現職 臺北科大/機械工程系
授課資訊 連結
Top
期刊論文   
  • "Kink effect for 28 nm n-channel field-effect transistors", International Journal of Nanotechnology (IJNT) (SCI paper); ( ISSN: 1475-7435), 59-73, SCI, 2015/01/01
  • "Gate Leakage for 28 nm Stacked HfZrOx Dielectric", IEEE Trans. on PLASMA SCIENCE, 3703-05, SCI, 2014/12/01
  • "Impact of stress induced by stressors on hot carrier", Int. J. Nanotechnol., Vol. 11, Nos. 1/2/3/, SCI, 2014/05/01
  • "Kink effect for 28 nm n-channel field-effect transistors", Int. J. Nanotechnol., Vol. x, No. x, xxxx, SCI, 2014/04/01
  • "Punch-through and junction breakdown", Int. J. Materials and Product Technology, pp.25–40,, SCI, 2014/04/01
  • "Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressors", Int. J. Nanotechnol, Vol. 11, Nos. 1/2/3/, SCI, 2014/03/01
  • "Gate Leakage for 28 nm Stacked HfZrOx Dielectric", IEEE TRANSACTIONS ON PLASMA SCIENCE, xx, SCI, 2014/03/01
  • "Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics", JOURNAL OF APPLIED PHYSICS 115, 074502 (2014), 115, 074502 (2014), SCI, 2014/02/01
  • "Comparison of NMOSFET and PMOSFET Devices That Combine CESL Stressor and SiGe Channel", JNN, 8127-8132, SCI, 2013/12/01
  • "Phenomena of n-typemetal-oxide-semiconductor-field-effect-transistors with contact etch stop layer stressor for different channel lengths", Thin Solid Films, 120-124, SCI, 2013/05/01
顯示/隱藏更多內容 Top
研討會論文   
  • "Electrical Stress Probing Recovery Efficiency of 28nm HK/MG nMOSFETs under Different Nitrogen Concentration in Nitridation", 2017 6th International Symposium on Next Generation Electronics (ISNE), Keelung, 2017/05/24
  • "Decoupled Tunneling and GIDL Effects for 28nm High-k Stacked nMOSFETs", 2017 6th International Symposium on Next Generation Electronics (ISNE), Keelung, 2017/05/24
  • "I-V Model of Nano nMOSFETs Incorporating Drift and Diffusion Current", 2017 6th International Symposium on Next Generation Electronics (ISNE), Keelung, 2017/05/24
  • "A New Model Explaining the Saturation Current of Nano-MOSFETs", IEDMS 2016, 台北, 2016/11/24
  • "Hot-Carrier-Induced-Degradation-and-Its-Recovery-in-HKMG-NMOSFETs", IEDMS 2016, 台北, 2016/11/24
  • "Substrate-Current-Characteristics-for-28-nm-HKMG-NMOSFETs", IEDMS 2016, 台北, 2016/11/24
  • "Feasible-Programming-Methods-for-28nm-node-nMOSFETs", IEDMS 2016, 台北, 2016/11/24
  • "Comparison-of-Nano-node-n-channel-FinFETs-and-28nm", IEDMS 2016, 台北, 2016/11/24
  • "The Program Mechanism with CHEI/DAHC on Nano HK/MG CMOS Logic Process", IEDMS 2016, 台北, 2016/11/24
  • "Multiple Sweeping Drain-Bias Stress in 28 nm HK/MG nMOSFETs", IEDMS, 台南, 2015/11/19
顯示/隱藏更多內容 Top
指導學生論文   
學生姓名 畢業年度 論文名稱 摘要 連結
張景棠 105 HK/MG pMOSFETs之熱載子劣化及其 恢復效應
王暐綸 105 奈米MOSFETs混合電流模型之I-V特性
謝一誠 103 High-k堆疊NMOSFETs之GCIP特性
簡瑋志 102 High-k堆疊PMOSFETs於不同氮濃度和退火溫度下之漏電流特性
陳文聖 102 28 nm堆疊式HK/MG nMOSFETs的特性與突出效應
陳鴻文 97 高介電係數薄膜應用於金氧半電容器與金氧半電晶體之電氣特性和可靠度研究
陳雙源 95 熱載子導致深次微米及奈米MOSFET劣化之研究
鄭稚信 94 奈米超薄氧化層PMOS元件之高閘極漏電流特性描述與分析
張昱信 93 應用於無線區域網路CMOS低雜訊放大器、功率放大器之設計及壓控震盪器之量測
林鴻全 93 利用先進互補式金氧半電晶體製程探討在混合訊號應用中熱載子效應對匹配造成的變化
顯示/隱藏更多內容 Top