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基本資料   
王錫九 副教授
Wang, Shea-Jue
聯絡資料 實驗室連結: 電子信箱: sjwang@ntut.edu.tw
聯絡電話:無
現職 臺北科大/材料及資源工程系
授課資訊 連結
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期刊論文   
  • "Thermal stress probing the channel-length modulation effect of nano n-type FinFETs", Microelectronics Reliability, SCI, 2017/06/01
  • "Effect of nitrogen flow rate on TaN diffusion barrier layer deposited between a Cu layer and a Si-based substrate", Ceramics International, SCI, 2017/06/01
  • "Poly(4-vinylphenol) gate insulator with cross-linking using a rapid low-power microwave induction heating scheme for organic thin-film-transistors", APL MATERIALS, 4, SCI, 2016/04/01
  • "Improvement in reliability of amorphous indium–gallium–zinc oxide thin-film transistors with Teflon/SiO 2 bilayer passivation under gate bias stress", Jpn. J. Appl. Phys., 4, SCI, 2016/01/01
  • "Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process", Materials, 1604-1613, SCI, 2015/04/01
  • "Characteristics of Fe-Si-B-Cr-C Powders Synthesized by the Spinning Water Atomization Process (SWAP) and its Application in Magnetic Core", Applied Mechanics and Materials, 101-105, EI, 2015/04/01
  • "Comparison of electrical characteristics for SiONx and HfZrOx gate dielectrics of MOSFETs with decoupled plasma nitridation treatment", Microelectronic Engineering, 97-101, SCI, 2015/03/01
  • "The enhancement of electromagnetic properties for Fe-Si-Cr alloy powders by sodium silicate treatmen", Journal of Alloys and Compounds, 30-35, SCI, 2015/03/01
  • "Preparation and Characterization of Molybdenum Thin Films by Direct-Current Magnetron Sputtering", Atlas Journal of Materials Science, 54-59, ELSE2, 2015/03/01
  • "Kink effect for 28nm n-channel field-effect transistors after decoupled plasma nitridation treatment with annealing temperatures", International Journal of Nanotechnology, 59-73, SCI, 2015/01/01
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研討會論文   
  • "Comparison of Nano-node n-channel FinFETs and 28nm HK/MG nMOSFETs", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
  • "Performance of TaN as Diffusion Barrier Layer under N2 Flow-rate Control", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
  • "Nitrogen Flow Rate Relating Diffusion Behaviors of Copper in TaN Layers", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
  • "The Program Mechanism with CHEI/DAHC on Nano HK/MG CMOS Logic Process", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
  • "Middle Gate Bias Exposing CLM Effect of Nano n-channel FinFETs", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
  • "Effective Surface Channel-length Effect of Nano-scale n-channel FinFETs Integrated with VT Doping Energies", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
  • "CLM Effect of Nano p-channel FinFETs Depending on VT Implant Energies", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
  • "A New Model Explaining the Saturation Current of Nano-MOSFETs", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
  • "Feasible Programming Methods for 28nm-node nMOSFETs", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
  • "Hot-Carrier Induced Degradation and Its Recovery in HK/MG NMOSFETs", The 2016 International Electron Devices and Materials Symposium (IEDMS 2016), Taipei, 2016/11/24
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指導學生論文   
學生姓名 畢業年度 論文名稱 摘要 連結
陳奕丞 105 奈米氧化銥微電極陣列應用於神經刺激電極
林昭宇 103 應用田口法於電子束熔煉鈦之參數優化研究
詹博鈞 102 利用射頻磁控濺鍍法在氧化矽基板上 成長石墨烯
林啟群 102 光源輔助濕蝕刻對GeSbTe硫屬化合物薄膜之微結構及光學特性研究
黃新亭 102 以石墨塊材製備石墨烯膜的特性分析
徐正茹 101 以化學溶液法製備摻雜氮及磷之石墨薄膜之性質研究
蔡芳菁 101 側壁封裝電子元件之技術開發
朱健誠 100 GeSbTe薄膜之微結構特性與太陽能電池的效率研究
黃政諺 99 感應加熱法合成大面積石墨膜及特性分析
黃昱哲 98 電極結構對DLC太陽能電池之影響及特性分析
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