瀏覽人次: 1796488
基本資料   
徐曉萱 助理教授
Hsiao-Hsuan HSU
聯絡資料 實驗室連結: 聯絡電話:(02)27712171 #2712
現職 臺北科大/材料及資源工程系
授課資訊 連結
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主要學歷   
就學期間 國別 主修學門系所 畢/肄業學校 學位
2009-09-01 ~ 2014-07-01 中華民國 電子工程學系 國立交通大學 博士
2006-09-01 ~ 2008-08-01 中華民國 電子工程學系 國立交通大學 碩士
2002-09-01 ~ 2006-06-01 中華民國 材料科學與工程學系 國立交通大學 學士
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精通專長   
  • 電子材料與元件技術
  • 熱電材料與模組製程
  • 半導體製程
  • 薄膜製程與分析
  • 材料熱動力學模擬
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相關經歷   
服務期間 服務機關 服務部門 職稱
2014-08-01 ~ 2016-03-01 台灣積體電路製造股份有限公司 前瞻產品可靠度處 主任工程師
2009-11-01 ~ 2014-08-01 工業技術研究院 綠能與環境研究所 研究員
2008-09-01 ~ 2009-06-01 台灣積體電路製造股份有限公司 先進製程產品工程部 高級工程師
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期刊論文   
  • "Investigation of Double Snapback Characteristic in Resistor-Triggered SCRs Stacking Structure", IEEE TRANSACTIONS ON ELECTRON DEVICES, 4200-4205, SCI, 2017/10/01
  • "Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors", IEEE TRANSACTIONS ON NANOTECHNOLOGY, 876-879, SCI, 2017/09/01
  • "Electrical Instability of InGaZnO Thin Film Transistors with and without Titanium Sub-Oxide Layer Under Light Illumination", Appl. Phys. A, 1-5, SCI, 2017/02/01
  • H. H. Hsu, C. Y. Chang, C. H. Cheng, S. H. Chiou, and C. H. Huang, High Mobility Bilayer Metal–Oxide Thin Film Transistors Using Titanium-Doped InGaZnO, IEEE Electron Device Lett., vol. 35, pp. 87-89, 2014/1
  • H. H. Hsu, C. Y. Chang, C. H. Cheng, S. H. Chiou, and C. H. Huang, An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-based Thin Film Transistor, IEEE Transaction on Nanotechnology, vol. 13, pp. 933-938, 2014/1
  • H. H. Hsu, C. Y. Chang, and C. H. Cheng, A Flexible IGZO Thin Film Transistor with Stacked TiO2-based Dielectrics Fabricated at Room Temperature, IEEE Electron Device Lett., vol. 34, pp. 768-770, 2013/1
  • H. H. Hsu, C. H. Cheng, Y. L. Lin, S. H. Chiou, C. H. Huang, and C. P. Cheng, Structural Stability Study of Thermoelectric Diffusion Barriers: Experimental Results and First Principles Calculations, Appl. Phys. Lett., vol. 103, pp. 053902, 2013/1
  • H. H. Hsu, C. H. Cheng, C. H. Huang, S. H. Chiou, C. M. Liu, Y. L. Lin, W. H. Chao, P. H. Yang, C. Y. Chang, and C. P. Cheng, Structural Stability of Diffusion Barriers in Thermoelectric SbTe: From First Principles Calculations to Experimental Results, J. Alloys Compd., vol. 588, pp. 633-637, 1980/1
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研討會論文   
  • "Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory", Electron Devices Technology and Manufacturing (EDTM), 神戶, 2018/03/13
  • "Ferroelectric Hafnium-Oxide Memories with Metal-Gate Strained Engineering", TACT 2017 International Thin Films Conference, 花蓮, 2017/10/15
  • "Strain-Enhanced Ferroelectric Aluminum-Doped Hafnium Oxides for Volatile and Nonvolatile Memories Applications", Solid State Devices and Materials (SSDM), 仙台, 2017/09/19
  • "Carrier Transport Mechanism and Electrical Properties of P-Type Tin-Oxide Thin-Film Transistors with Channel Thickness Scaling", International Symposium on Metastable, Amorphous and Nanostructured Materials, Donostia-San Sebastian, 2017/06/18
  • "Electrical characterization of p-type metal-oxide thin film transistors using tin-rich tin-oxide semiconductor materials", IEEE The 6th International Symposium on Next-Generation Electronics (ISNE), 基隆, 2017/05/23
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